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SSE90N10-14
90A , 100V , RDS(ON) 16m
Elektronische Bauelemente N-Channel Enhancement Mode MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free

TO-220P
DESCRIPTION
These miniature surface mount MOSFETs utilize a D

high cell density trench process to provide low RDS(on) C
and to ensure minimal power loss and heat dissipation. B R
T
A
E
S
FEATURES
Low RDS(on) provides higher efficiency and G
extends battery life. F I
Low thermal impedance copper leadframe H
J
TO-220P saves board space. K

Fast Switch Speed. L
U
High performance trench technology. X M
P
N
APPLICATION O V
DC-DC converters and power management in portable
and battery-powered products such as computers, printers, Q Q W
PCMCIA cards, cellular and cordless telephones. 1 2 3

REF. Millimeter REF. Millimeter
N-Channel Min. Max. Min. Max.
A 7.90 8.10 M - 1.50
B 9.45 9.65 N 0.75 0.95
D2 C 9.87 10.47 O 0.66 0.86
D - 11.50 P 13.50 14.50
E 1.06 1.46 Q 2.44 3.44
F 2.60 3.00 R 3.50 3.70
G1 G 6.30 6.70 S 1.15 1.45
H 8.35 8.75 T 4.30 4.70
I 14.7 15.3 U - 2.7
J 1.60 Typ. V 1.89 3.09
S3 K 1.10 1.30 W 0.40 0.60
L 1.17 1.37 X 2.60 3.60

ABSOLUTE MAXIMUM RATINGS (TA=25