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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW80
UHF power transistor
Product specification March 1993
Philips Semiconductors Product specification
UHF power transistor BLW80
DESCRIPTION The transistor is housed in a 1/4"
capstan envelope with a ceramic cap.
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
QUICK REFERENCE DATA
R.F. performance up to Th = 25