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STP11NM60A
STP11NM60AFP - STB11NM60A-1
N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK
MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STP11NM60A 600 V <0.45 11 A
STP11NM60AFP 600 V <0.45 11 A
STB11NM60A-1 600 V <0.45 11 A
n TYPICAL RDS(on) = 0.4 3
2
3
12
n HIGH dv/dt 1
n LOW INPUT CAPACITANCE AND GATE
CHARGE TO-220 I2PAK
n LOW GATE INPUT RESISTANCE
3
2
1
TO-220FP
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM
on-resistance, impressively high dv/dt. The adoption
of the Company's proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NM60A P11NM60A TO-220 TUBE
STP11NM60AFP P11NM60AFP TO-220FP TUBE
STB11NM60A-1 B11NM60A I2PAK TUBE
March 2002 1/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP11NM60A
STP11NM60AFP
STB11NM60A-1
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage