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SEMICONDUCTOR KTC3229
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
COLOR TV CHROMA OUTPUT APPLICATION.
A C
FEAUTRES
DIM MILLIMETERS
F
High Voltage : VCEO=300V. S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Small Collector Output Capacitance : Cob=4.0pF(Max.). E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
_
MAXIMUM RATING (Ta=25 ) L L J 13.6 + 0.5
K
R _
K 3.7 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Base Voltage VCBO 300 V
P _
6.8 + 0.1
Q _
4.5 + 0.2
Collector-Emitter Voltage VCEO 300 V _
R 2.6 + 0.2
N N H S 0.5 Typ
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Base Current IB 20 mA 1. BASE
Q
1 2 3
2. COLLECTOR
Collector Power Dissipation PC 2 W 3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=240V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 A
hFE (1) VCE=10V, IC=0.5mA 20 - -
DC Current Gain
hFE (2) VCE=10V, IC=20mA 30 - 200
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 1.0 V
Transition Frequency fT VCE=20V, IC=20mA 75 95 - MHz
Collector Output Capacitance Cob VCB=20V, IE=0, f=1MHz - - 4.0 pF
2007. 5. 22 Revision No : 1 1/2
KTC3229
I C - V CE h FE - I C
60 500
COMMON COMMON EMITTER
COLLECTOR CURRENT I C (mA)
EMITTER 300 VCE =10V
50 0.7
Ta=25 C
DC CURRENT GAIN h FE
Ta=25 C
0.6
40
0.5 100
30 0.4 50
0.3 30
20
0.2
10 I B=0.1mA 10
0
0 5
0 4 8 12 16 20 24 28 32 0.1 0.3 1 3 10 30 50
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C SAFE OPERATING AREA
COLLECTOR-EMITTER SATURATION
5 300
COMMON EMITTER I C MAX. (PULSED) 30
3 I C /I B =10 1 0