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CEV2306
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
20V, 2A, RDS(ON) = 65m @VGS = 4.5V.
RDS(ON) = 85m @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. D
Lead free product is acquired.
SOT-323 package.
D
S G
G
SOT-323(SC-70)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS