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STD1NB80-1
N - CHANNEL 800V - 16 - 1A - IPAK
PowerMESHTM MOSFET
PRELIMINARY DATA

TYPE V DSS R DS(on) ID
STD1NB80-1 800 V < 20 1A
s TYPICAL RDS(on) = 16
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3
2
DESCRIPTION 1
Using the latest high voltage MESH OVERLAYTM IPAK
process, STMicroelectronics has designed an TO-251
advanced family of power MOSFETs with (Suffix "-1")
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s AC ADAPTORS AND BATTERY CHARGERS

FOR HANDHELD EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 800 V
V DGR Drain- gate Voltage (R GS = 20 k) 800 V
V GS Gate-source Voltage