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SEMICONDUCTOR KRA310E~KRA314E
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
FEATURES B
With Built-in Bias Resistors. DIM MILLIMETERS
A _
1.60 + 0.10
D
Simplify Circuit Design. 2 B _
0.85 + 0.10
G
_
A
C 0.70 + 0.10
Reduce a Quantity of Parts and Manufacturing Process. 3
H
1 D 0.27+0.10/-0.05
High Packing Density. E _
1.60 + 0.10
G _
1.00 + 0.10
H 0.50
_
EQUIVALENT CIRCUIT J 0.13 + 0.05
C J
C
R1
B
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
E
ESM
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V Collector Power Dissipation PC 100 mW
Collector-Emitter Voltage VCEO -50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO -5 V Storage Temperature Range Tstg -55 150
Collector Current IC -100 mA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
DC Current Gain hFE VCE=-5V, IC=-1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-0.5mA - -0.1 -0.3 V
Transition Frequency fT * VCE=-10V, IC=-5mA - 250 - MHz
KRA310E - 4.7 -
KRA311E - 10 -
Input Resistor KRA312E R1 - 100 - k
KRA313E - 22 -
KRA314E - 47 -
Note : * Characteristic of Transistor Only.
Marking
Type Name
MARK SPEC
TYPE KRA310E KRA311E KRA312E KRA313E KRA314E
MARK PK PM PN PO PP
2002. 7. 9 Revision No : 1 1/4
KRA310E~KRA314E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRA310E - 0.2 -
KRA311E - 0.065 -
Rise Time KRA312E tr - 0.4 -
KRA313E - 0.1 -
KRA314E - 0.15 -
KRA310E - 2.0 -
KRA311E VO=-5V - 1.7 -
Switching
Storage Time KRA312E tstg VIN=-5V - 3.0 - S
Time
KRA313E RL=1k - 2.0 -
KRA314E - 1.5 -
KRA310E - 0.3 -
KRA311E - 0.3 -
Fall Time KRA312E tf - 1.7 -
KRA313E - 0.8 -
KRA314E - 1.5 -
2002. 7. 9 Revision No : 1 2/4
KRA310E~314E
h FE - I C VCE(sat) - I C
KRA310E KRA310E
COLLECTOR-EMITTER SATURATION
2k -2
I C /IB =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 Ta=100 C -0.5
300 -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03
Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA311E KRA311E
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA312E KRA312E
COLLECTOR-EMITTER SATURATION
2k -2
IC /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C -0.1
100 Ta=-25 C
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2002. 7. 9 Revision No : 1 3/4
KRA310E~314E
h FE - I C VCE(sat) - I C
KRA313E KRA313E
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
100 Ta=-25 C -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA314E KRA314E
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
Ta=-25 C
VCE =-5V
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2002. 7. 9 Revision No : 1 4/4