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TIP41A/41B/41C
TIP42A/42B/42C
COMPLEMENTARY SILICON POWER
TRANSISTORS

n SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION
The TIP41A, TIP41B and TIP41C are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are TIP42A,
TIP42B and TIP42C. 3
2
1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
NPN T IP41A TIP41B T IP41C
PNP T IP42A TIP42B T IP42C
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 6 A
I CM Collector Peak Current 10 A
IB Base Current 3 A
o
P tot T otal Dissipation at Tc ase 25 C 65 W
o
Tamb 25 C 2 W
o
T s tg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C

October 1995 1/4
TIP41A/TIP41B/TIP41C/TIP42A/TIP42B/TIP42C

THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1.92 C/W
o
R thj- amb Thermal Resistance Junction-ambient Max 62.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CBO Collector Cut-off for TIP41A/42A
Current (I B = 0) V CE = 30 V 0.7 mA
for TIP41B/41C/42B/42C
V CB = 60 V 0.7 mA
I CES Collector Cut-off for T IP41A/42A V CE = 60 V 0.4 mA
Current (V BE = 0) for T IP41B/42B V CE = 80 V 0.4 mA
for TIP41C/42C V CE = 100 V 0.4 mA
I EBO Emitter Cut- off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for T IP41A/42A 60 V
(I B = 0) for T IP41B/42B 80 V
for T IP41C/42C 100 V
V CE(sat )* Collector-Emitter IC = 6 A I B = 0.6 A 1.5 V
Saturation Voltage
V BE(on) * Base-Emitter Voltage IC = 6 A V CE = 4 V 2 V
h FE* DC Current Gain I C = 0.3 A V CE = 4 V 30
IC = 3 A V CE = 4 V 15 75
hfe Small Signal Current I C = 0.5 A V CE = 10 V
Gain f = 1 KHz 20
I C = 0.5 A V CE = 10 V
f = 1 MHz 3
Pulsed: Pulse duration = 300