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D882(NPN)
TO-251 Transistor

1. EMITTER TO-251

2. COLLECTOR

3BASE

1 2 3

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V

Collector cut-off current ICBO VCB= 40 V, IE=0 1