Text preview for : si4420dy.pdf part of Vishay si4420dy . Electronic Components Datasheets Active components Transistors Vishay si4420dy.pdf
Back to : si4420dy.pdf | Home
Si4420DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY FEATURES
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A)
D 100% Rg Tested
0.009 @ VGS = 10 V 13.5
30
0.013 @ VGS = 4.5 V 11
D
SO-8
S 1 8 D
S 2 7 D G
S 3 6 D
G 4 5 D
Top View S
Ordering Information: Si4420DY N-Channel MOSFET
Si4420DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 13.5 9.5
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 10.8 7.5
A
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)a IS 2.7 1.36
TA = 25_C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70_C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t t 10 sec 33 42
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady State 70 84 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71818 www.vishay.com
S-31990--Rev. F, 13-Oct-03 1
Si4420DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 2.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 5
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A
VGS = 10 V, ID =13.5 A 0.0075 0.009
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = 4.5 V, ID = 11 A 0.010 0.013
Forward Transconductancea gfs VDS = 15 V, ID = 13.5 A 50 S
Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 1.1 V
Dynamicb
Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 13.5 A 29 45
Total Gate Charge Qgt 58 90
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 13.5 A
, , 12
Gate-Drain Charge Qgd 9.5
Gate Resistance Rg 0.5 2.1 4.6 W
Turn-On Delay Time td(on) 22 35
Rise Time tr 13 20
VDD = 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, Rg = 6 W 82 125 ns
Fall Time tf 30 45
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/ms 50 75
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 4 V
40 40
I D - Drain Current (A)
I D - Drain Current (A)
30 30
20 20
TC = 125_C
10 3V 10
25_C
-55_C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71818
2 S-31990--Rev. F, 13-Oct-03
Si4420DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.030 5000
r DS(on) - On-Resistance ( W )
Ciss
0.024 4000
C - Capacitance (pF)
0.018 3000
VGS = 4.5 V
0.012 2000
Coss
0.006 1000
VGS = 10 V Crss
0.000 0
0 10 20 30 40 50 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 13.5 A ID = 13.5 A
r DS(on) - On-Resistance (W)
8 1.4
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.05
0.04
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C ID = 13.5 A
10 0.03
0.02
TJ = 25_C
0.01
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71818 www.vishay.com
S-31990--Rev. F, 13-Oct-03 3
Si4420DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 200
0.2
160
ID = 250 mA
V GS(th) Variance (V)
-0.0
120
Power (W)
-0.2
80
-0.4
40
-0.6
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71818
4 S-31990--Rev. F, 13-Oct-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1