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Philips Semiconductors Product specification

TrenchMOSTM transistor BUK7515-100A
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 100 V
'trench' technology which features ID Drain current (DC) 75 A
very low on-state resistance. It is Ptot Total power dissipation 230 W
intended for use in automotive and Tj Junction temperature 175