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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DW

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 - 1500 V
VCEO Collector-emitter voltage - 800 V
(open base)
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
Ptot Total power dissipation Tmb 25