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DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ34
NPN 4 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ34

DESCRIPTION PINNING
NPN transistor encapsulated in a 4 PIN DESCRIPTION
lead SOT122A envelope with a
Code: BFQ34/01
ceramic cap. All leads are isolated lfpage 4
from the stud. 1 collector
2 emitter 1 3
It is primarily intended for driver and
final stages in MATV system 3 base
amplifiers. It is also suitable for use in 4 emitter
low power band IV and V equipment.
2
Diffused emitter-ballasting resistors
and the application of gold sandwich Top view MBK187

metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
Fig.1 SOT122A.
capabilities.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter - 25 V
VCEO collector-emitter voltage open base - 18 V
IC collector current - 150 mA
Ptot total power dissipation up to Tc = 160