2n5320_2n5321.pdf part of ST 2n5320 2n5321 2n5320_2n5321.pdf, . Electronic Components Datasheets Active components Transistors ST 2n5320

Text preview for : 2n5320_2n5321.pdf part of ST 2n5320 2n5321 . Electronic Components Datasheets Active components Transistors ST 2n5320_2n5321.pdf

Back to : 2n5320_2n5321.pdf | Home

2N5320
2N5321

SMALL SIGNAL NPN TRANSISTORS
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MEDIUM POWER AMPLIFIER
s PNP COMPLEMENTS ARE 2N5322 AND
2N5323

DESCRIPTION
The 2N5320 and 2N5321 are silicon epitaxial
planar NPN transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
TO-39
The complementary PNP types are respectively
the 2N5322 and 2N5323

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N5320 2N5321
V CBO Collector-Base Voltage (I E = 0) 100 75 V
V CEV Collector-Emitter Voltage (V BE = 1.5V) 100 75 V
V CEO Collector-Emitter Voltage (I B = 0) 75 50 V
V EBO Emitter-Base Voltage (I C = 0) 6 5 V
IC Collector Current 1.2 A
I CM Collector Peak Current 2 A
IB Base Current 1 A
o
P tot Total Dissipation at T amb = 25 C 1 W
P tot Total Dissipation at T c = 25 o C 10 W
o
T stg , T j Storage and Junction Temperature -65 to 200 C

June 1997 1/4
2N5320/2N5321

THERMAL DATA
o
R thj-case Thermal Resistance Junction-Case Max 17.5 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 175 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 80 V for 2N5320 0.5