m8050_to-92.pdf part of LGE m8050 to-92 m8050_to-92.pdf, . Electronic Components Datasheets Active components Transistors LGE m8050

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M8050(NPN)
TO-92 Transistors

TO-92
1. EMITTER

2. BASE

3. COLLECTOR

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 800 mA
PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters)
TJ Junction Temperature 125
Tstg Storage Temperature -55-125

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100A,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V
Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A
Collector cut-off current ICEO VCE= 20V, IB=0 0.1 A
hFE(1) VCE=1V, IC=5mA 45
DC current gain hFE(2) VCE=1V, IC=100mA 80 400
hFE(3) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT VCE=6V, IC= 20mA , f=30MHz 150 MHz
* Pulse Test : pulse width 300