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S9015
PNP General Purpose Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -45 Vdc
Collector-Base Voltage VCBO -50 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation TA=25 C PD 0.4 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) V(BR)CEO -45 - Vdc
Collector-Base Breakdown Voltage (IC= -100uAdc, IE=0) V(BR)CBO -50 - Vdc
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 - Vdc
Collector Cutoff Current (VCB= -50 Vdc, IE=0) ICBO - -0.05 uAdc
Emitter Cutoff Current (VEB= -5.0Vd c, IC =0) IEBO - -0.05 uAdc
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S9015 WEITRON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain
(IC= -1mAdc, VCE=-5Vdc) HFE 60 1000 -
Collector-Emitter Saturation Voltage
VCE(sat) - -0.3 Vdc
(IC= -100 mAdc, IB= -10 mAdc)
Base-Emitter Saturation Voltage
VBE(sat) - -1 Vdc
(IC= -100 mAdc, IB= -10mAdc)
Transition Frequency
fT 150 - MHz
(IC= -10 mAdc, VCE= -5 Vdc, f=30MHz)
CLASSIFICATION OF hFE
Rank A B C D
Range 60-150 100-300 200-600 400-1000
WEITRON
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S9015 WEITRON
FIG.1 FIG.2
FIG.3 FIG.4
FIG.5 FIG.6
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S9015
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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