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SEMICONDUCTOR KTC9012
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C

FEATURES
Excellent hFE Linearity.

A
Complementary to KTC9013.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45

J
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO -40 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO -30 V M 0.45 MAX
N 1.00
1 2 3

C
Emitter-Base Voltage VEBO -5 V

L

M
Collector Current IC -500 mA 1. EMITTER
2. BASE
IE 3. COLLECTOR
Emitter Current 500 mA
625
Collector Power Dissipation PC* mW
400 TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-1V, IC=-50mA 64 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.25 V
Base-Emitter Voltage VBE IC=-100mA, VCE=-1V -0.8 -1.0 V
Transition Frequency fT VCB=-6V, IC=-20mA, f=100MHz 150 - - MHz
Collector Output Capacitance Cob VCB=-6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification D:64 91, E:78 112, F:96 135, G:118 166, H:144 202, I:176 246

2010. 6. 25 Revision No : 2 1/1
KTC9012

IC - VCE hFE - IC
(LOW VOLTAGE REGION)
-600 500
COLLECTOR CURRENT IC (mA)

COMMON EMITTER
-8 -7 -6 Ta=25 C 300

DC CURRENT GAIN hFE
-500 -5 Ta =100 C VCE =-6V
-4
-400 Ta =25 C
-3 100 Ta =-25 C
-300 VCE =-1V
-2 50
-200
IB =-1mA 30

-100
COMMON EMITTER
0
0 10
0 -1 -2 -3 -4 -5 -0.3 -1 -3 -10 -30 -100 -300 -1K

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCE(sat) - IC IB - VBE
COLLECTOR-EMITTER SATURATION

-0.5 -1k
COMMON EMITTER COMMON
-0.3 -300 EMITTER
BASE CURRENT IB (