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Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Optimized for "Low Side" Synchronous
PRODUCT SUMMARY
Rectifier Operation
VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested
0.0045 @ VGS = 10 V 20 APPLICATIONS
30
0.0055 @ VGS = 4.5 V 19 D DC/DC Converters
D Synchronous Rectifiers
SO-8
D
S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D
G
Top View
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel) S
Si4362DY--E3 (Lead Free)
Si4362DY-T1--E3 (Lead Free with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter Symbol Limits Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS "12
TA = 25_C 20
Continuous Drain Current (TJ = 150_C)a ID
TA = 70_C 15
A
Pulsed Drain Current (10 ms Pulse Width) IDM 60
Continuous Source Current (Diode Conduction)a IS 2.9
TA = 25_C 3.5
Maximum Power Dissipationa PD W
TA = 70_C 2.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGSa
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient RthJA 29 35
_C/W
Maximum Junction-to-Foot (Drain) RthJF 13 16
Notes
a. Surface Mounted on 1" x 1" FR4 Board, t v 10 sec
Document Number: 71628 www.vishay.com
S-40762--Rev. E, 19-Apr-04 1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30 V, VGS = 0 V, TJ = 55_C 5
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 20 A 0.0035 0.0045
Drain-Source On-State Resistancea rDS(on) W
VGS = 4.5 V, ID = 19 A 0.0042 0.0055
Forward Transconductancea gfs VDS = 15 V, ID = 20 A 90 S
Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 V
Dynamicb
Total Gate Charge Qg 42 55
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A 12.8 nC
Gate-Drain Charge Qgd 7.7
Gate Resistance RG 0.5 1.3 2.2 W
Turn-On Delay Time td(on) 17 30
Rise Time tr VDD = 15 V, RL = 15 W 14 25
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, Rg = 6 W 158 230 ns
Fall Time tf 43 65
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 50 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
60 60
VGS = 10 thru 3 V
50 50
40 40
I D - Drain Current (A)
I D - Drain Current (A)
30 30
20 20
TC = 125_C
10 2V 10
25_C
-55_C
0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71628
2 S-40762--Rev. E, 19-Apr-04
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current Capacitance
0.010 8000
0.008
r DS(on) - On-Resistance ( W )
Ciss
6000
C - Capacitance (pF)
0.006
VGS = 4.5 V 4000
0.004
VGS = 10 V
2000
0.002 Coss
Crss
0.000 0
0 10 20 30 40 50 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
4 ID = 20 A 1.4 ID = 20 A
rDS(on) - On-Resiistance
(Normalized)
3 1.2
2 1.0
1 0.8
0 0.6
0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.025
0.020
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
10 0.015
0.010
TJ = 25_C
ID = 20 A
0.005
1 0.000
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71628 www.vishay.com
S-40762--Rev. E, 19-Apr-04 3
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 60
ID = 250 mA 50
0.2
V GS(th) Variance (V)
-0.0 40
Power (W)
-0.2 30
-0.4 20
-0.6 10
-0.8 0
-50 -25 0 25 50 75 100 125 150 10-2 10-1 1 10 100 600
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 67_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71628
4 S-40762--Rev. E, 19-Apr-04