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9013 NPN SILICON TRANSISTOR
TO 92
FEATURES
1.EMITTER
Power dissipation 2.BASE
PCM : 0.625 W Tamb=25
3.COLLECTOR
Collector current
ICM : 0.5 A
1 2 3
Collector-base voltage --
V(BR)CBO : 45 V
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
- -
V(BR)CBO Ic= 100 A IE=0 45 V
Collector-emitter breakdown voltage
- -
V(BR)CEO Ic= 0. 1 mA IB=0 25 V
Emitter-base breakdown voltage
- -
V(BR)EBO IE= 100 A IC=0 5 V
Collector cut-off current
--
ICBO VCB= 40 V IE=0 0.1 A
Collector cut-off current
--
ICEO VCE= 20 V IB=0 0.1 A
Emitter cut-off current
--
IEBO VEB= 5 V IC=0 0.1 A
HFE 1 VCE= 1 V, IC= 50 mA 64 300
DC current gain(note)
HFE 2 VCE= 1V, IC =500 mA 40
Collector-emitter saturation voltage
- -
VCE(sat) IC= 500 mA, IB=50 mA 0.6 V
Base-emitter saturation voltage
--
VBE(sat) IC= 500mA, IB= 50 mA 1.2 V
Base-emitter voltage
- -
VBE IE=100mA 1.4 V
VCE= 6 V, IC= 20 mA
Transition frequency
fT 150 MHz
f =30MHz
CLASSIFICATION OF HFE(1)
Rank
D E F G H I
Range
64-91 78-112 96-135 112-166 144-220 190-300
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]