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TECHNICAL DATA

PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/336

Devices Qualified
Level
2N3810 2N3811 JAN
2N3810L 2N3811L JANTX
2N3810U 2N3811U JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 50 mAdc
One Both
Section 1 Sections2
Total Power Dissipation @ TA = +250C PT 0.5 0.6 W TO-78*
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10