Text preview for : kta1273.pdf part of HT Semiconductor kta1273 . Electronic Components Datasheets Active components Transistors HT Semiconductor kta1273.pdf
Back to : kta1273.pdf | Home
KTA1273
TRANSISTOR (PNP) SOT-89-3L
FEATURES
High Current 1. BASE
Low Voltage
2. COLLECTOR
Complementary to KTC3205
3. EMITTER
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -2 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
DC current gain hFE VCE=-2V, IC=-0.5A 100 320
Collector-emitter saturation voltage VCE(sat) IC=-1.5A,IB=-30mA -2 V
Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V
Transition frequency fT VCE=-2V,IC=-500mA 120 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 48 pF
CLASSIFICATION OF hFE
RANK O Y
RANGE 100