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2SB1 440

TRANSISTOR(PNP)
SOT-89

1. BASE
FEATURES
Low collector-emitter saturation voltage VCE(sat)
For low-frequency output amplification 2. COLLECTOR 1
Complementary to 2SD2185 2
3. EMITTER 3
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V

Collector cut-off current ICBO VCB=-50V, IE=0 -1 A

Emitter cut-off current IEBO VEB=-5V, IC=0 -1 A

hFE1 VCE=-2V, IC=-200mA 120 340
DC current gain
hFE2 VCE=-2V, IC=-1A 60

Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.3 V

Base- emitter saturation voltage VBE(sat) IC=-1A, IB=-50mA -1..2 V

Transition frequency fT VCE=-10V, IC=50mA, f=200MHz 80 MHz

Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 60 pF

CLASSIFICATION OF hFE1
Rank R S

Range 120-240 170-340

Marking 1L

1

JinYu www.htsemi.com
semiconductor
Date:2011/05
2SB1 440
Typical Characteristics

2

JinYu www.htsemi.com
semiconductor

Date:2011/05