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MMBT3904
General Purpose Transistor COLLECTOR
3
3
NPN Silicon 1 1
BASE
2

2
EMITTER
SOT-23

Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base VOltage VEBO 6.0 Vdc
Collector Current-Continuous IC 200 mAdc

Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) 225 mW
TA=25 C PD
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient RqJA 556 C/W
Total Device Dissipation 300 mW
Alumina Substrate, (2) TA=25 C PD
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient RqJA 417 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C

Device Marking
MMBT3904=1AM

Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit

Off C har acter istics
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc

Collector-Base Breakdown Voltage (IC=10