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STQ1NE10L
N-CHANNEL 100V - 0.3 - 1A TO-92
STripFETTM POWER MOSFET

TYPE VDSS RDS(on) ID

STQ1NE10L 100 V <0.4 1A
s TYPICAL RDS(on) = 0.3
s EXCEPTIONAL HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s AVALANCHE RUGGED TECHNOLOGY
s LOW THRESHOLD DRIVE

DESCRIPTION
This Power MOSFET is the latest development of TO-92 TO-92
STMicroelectronis unique "Single Feature SizeTM"
(Ammopack)
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage