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PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 02 -- 21 April 2009 Product data sheet

1. Product profile

1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515E.

1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Low power switches (e.g. motors, fans)
I Portable applications

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 15 V
IC collector current - - 0.5 A
ICM peak collector current single pulse; - - 1 A
tp 1 ms
RCEsat collector-emitter IC = 500 mA; [1] - 300 500 m
saturation resistance IB = 50 mA

[1] Pulse test: tp 300