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PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 10 -- 15 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1. Product overview
Type number Package PNP/PNP NPN/NPN
NXP JEITA complement complement
PEMD3 SOT666 - PEMB11 PEMH11
PIMD3 SOT457 SC-74 - -
PUMD3 SOT363 SC-88 PUMB11 PUMH11
1.2 Features
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
1 GND (emitter) TR1
6 5 4 6 5 4
2 input (base) TR1
3 output (collector) TR2
R1 R2
4 GND (emitter) TR2
TR2
5 input (base) TR2 TR1
1 2 3
6 output (collector) TR1 001aab555 R2 R1
1 2 3
006aaa143
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PEMD3 - plastic surface mounted package; 6 leads SOT666
PIMD3 SC-74 plastic surface mounted package; 6 leads SOT457
PUMD3 SC-88 plastic surface mounted package; 6 leads SOT363
4. Marking
Table 5. Marking codes
Type number Marking code[1]
PEMD3 D3
PIMD3 M7
PUMD3 D*3
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PEMD3_PIMD3_PUMD3_10