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ME4410
N-Channel 30-V (D-S) MOSFET

GENERAL DESCRIPTION FEATURES
The ME4410 is the N-Channel logic enhancement mode power 30V/10A,RDS(ON)=18m@VGS=10V

field effect transistors are produced using high cell density, DMOS 30V/5A,RDS(ON)=20m@VGS=4.5V

trench technology. This high density process is especially tailored Super high density cell design for extremely low RDS(ON)

to minimize on-state resistance. These devices are particularly Exceptional on-resistance and maximum DC current

suited for low voltage application such as cellular phone and capability

notebook computer power management and other battery

powered circuits where high-side switching, and low in-line power APPLICATIONS
loss are needed in a very small outline surface mount package. Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter

PIN CONFIGURATION

(SOP-8)
Top View

Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS