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GT10J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT10J301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
MOTOR CONTROL APPLICATIONS

Third-generation IGBT
Enhancement mode type
High speed : tf = 0.30s (Max.)
Low saturation voltage : VCE (sat) = 2.7V (Max.)
FRD included between emitter and collector

ABSOLUTE MAXIMUM RATINGS (Ta = 25