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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100AT

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for
use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and
inverters.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 1.0 A
ICM Collector current peak value - 2.0 A
Ptot Total power dissipation Tsp 25