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SEMICONDUCTOR KF5N50PZ
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
D _
0.8 + 0.1
FEATURES I
E _
3.6 + 0.2
VDSS= 500V, ID= 5.0A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : RDS(ON)=1.4 @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
Qg(typ) = 12nC J J _
13.08 + 0.3
D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Tc=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT Q _
9.2 + 0.2
1 2 3 1. GATE
Drain-Source Voltage VDSS 500 V 2. DRAIN
3. SOURCE
Gate-Source Voltage VGSS 30 V
@TC=25 5.0
ID TO-220AB
Drain Current @TC=100 2.9 A
Pulsed (Note1) IDP 13
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8.6 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 83 W
PD
Dissipation Derate above 25 0.66 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.5 /W
Thermal Resistance, Junction-to-
RthJA 62.5 /W
Ambient
PIN CONNECTION
D
G
S
2011. 2. 7 Revision No : 0 1/6
KF5N50PZ
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.15 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
RL=50 ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS Pulsed Source Current ISP - - 20
Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=5A, VGS=0V, - 300 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 4.8 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 5A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF5N50
PZ 101 2
1 PRODUCT NAME
2 LOT NO
2011. 2. 7 Revision No : 0 2/6
KF5N50PZ
Fig1. ID - VDS Fig2. ID - VGS
100
VDS=30V
Drain Current ID (A)
Drain Current ID (A)
1
VGS=10V 10
10
VGS=7V
TC=100 C
25 C
0
10
1 VGS=5V
-1
0.1 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 3.0
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
2.5
1.1 VGS=6V
2.0
1.0 1.5
VGS=10V
1.0
0.9
0.5
0.8 0
-100 -50 0 50 100 150 0 2 4 6 8 10 12
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
10
2 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 2.5A
2.5
Normalized On Resistance
10
1 2.0
TC=100 C 1.5
25 C
10
0 1.0
0.5
10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2011. 2. 7 Revision No : 0 3/6
KF5N50PZ
Fig 7. C - VDS Fig8. Qg- VGS
1000 12
ID=5A
Gate - Source Voltage VGS (V)
Ciss 10
Capacitance (pF)
100 8
VDS = 400V
Coss VDS = 250V
6
VDS = 100V
10 4
Crss 2
1 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area Fig10. ID - Tj
102 Operation in this 6
area is limited by RDS(ON)
5
Drain Current ID (A)
Drain Current ID (A)
101
100