Text preview for : bc856s.pdf part of Philips bc856s . Electronic Components Datasheets Active components Transistors Philips bc856s.pdf
Back to : bc856s.pdf | Home
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
Rev. 02 -- 19 February 2009 Product data sheet
1. Product profile
1.1 General description
PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - -65 V
IC collector current - - -100 mA
hFE DC current gain VCE = -5 V; 110 - -
IC = -2 mA
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1
5 base TR2 1 2 3
1 2 3
6 collector TR1
sym018
NXP Semiconductors BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BC856S SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code[1]
BC856S 5F*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - -80 V
VCEO collector-emitter voltage open base - -65 V
VEBO emitter-base voltage open collector - -5 V
IC collector current - -100 mA
Ptot total power dissipation Tamb 25