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SEMICONDUCTOR KTC4379
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
A
C
FEATURES
H
Low Saturation Voltage G
: VCE(sat)=0.5V(Max.) (IC=1A)
B
J
E
High Speed Switching Time : tstg=1.0 S(Typ.)
DIM MILLIMETERS
PC=1 2W (Mounted on Ceramic Substrate) A 4.70 MAX
D D B _
2.50 + 0.20
Small Flat Package.
K C 1.70 MAX
Complementary to KTA1666. F F
D 0.45+0.15/-0.10
E 4.25 MAX
F _
1.50 + 0.10
G 0.40 TYP
MAXIMUM RATING (Ta=25 ) H 1.75 MAX
1 2 3
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05
Collector-Base Voltage VCBO 50 V
1. BASE
Collector-Emitter Voltage VCEO 50 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO 5 V
Collector Current IC 2 A
Base Current IB 0.4 A
SOT-89
PC 500 mW
Collector Power Dissipation
PC * 1 W
Marking
Junction Temperature Tj 150
h FE Rank Lot No.
Storage Temperature Range Tstg -55 150
PC* : KTC4379 mounted on ceramic substrate (250mm2x0.8t)
Type Name U
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 50 - - V
hFE (1) (Note2) VCE=2V, IC=0.5A (Note 1) 70 - 240
DC Current Gain
hFE (2) VCE=2V, IC=1.5A (Note 1) 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.05A (Note 1) - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.05A (Note 1) - - 1.2 V
Transition Frequency fT VCE=2V, IC=0.5A - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 30 - pF
20