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SEMICONDUCTOR KTA1709
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR


STROBO FLASH APPLICATION. A
HIGH CURRENT APPLICATION. B D
C
E
FEATURES
F
hFE=100 320 (VCE=-2V, IC=-0.5A).
Low Collector Saturation Voltage. G

: VCE(sat)=-0.5V (IC=-3A, IB=-75mA).
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
MAXIMUM RATING (Ta=25 ) E 3.5
F _
11.0 + 0.3
CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX
M
H 1.0 MAX
Collector-Base Voltage VCBO -35 V J 1.9 MAX
O K _
0.75 + 0.15
N P
Collector-Emitter Voltage VCEO -20 V 1 2 3 L _
15.50 + 0.5
M _
2.3 + 0.1
Emitter-Base Voltage VEBO -8 V N _
0.65 + 0.15
1. EMITTER O 1.6
IC P 3.4 MAX
Collector Current -5 A 2. COLLECTOR
3. BASE
Base Current IB -0.5 A
Collector Power Dissipation PC 1.5 W
TO-126
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -8 - - V
hFE(1) (Note) VCE=-2V, IC=-0.5A 100 - 320
DC Current Gain
hFE(2) VCE=-2V, IC=-4A 70 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-75mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-2V, IC=-4A - - -1.5 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 170 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 62 - pF
Note : hFE(1) Classification O:100 200 , Y:160 320




2003. 7. 24 Revision No : 2 1/2
KTA1709


I C - VCE I C - V BE
-8 -8
-150mA COMMON EMITTER
COLLECTOR CURRENT I C (A)




COLLECTOR CURRENT I C (A)
-100mA Tc=25 C
-6 -70mA -6
-50mA




C
-4 -30mA -4




100
Tc=-25 C
-20mA




Tc=
I B =-10mA Tc=25 C
-2 -2
COMMON EMITTER
VCE =-2V
0 0
0 -2 -4 -6 -8 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0

COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE V BE (V)




h FE - I C VCE(sat) - I C
1k -3
COLLECTOR-EMITTER SATURATION




COMMON EMITTER
500
DC CURRENT GAIN h FE




I C /IB =40
Tc=100 C
VOLTAGE V CE(sat) (V)




300 -1
Tc=25 C
Tc=-25 C -0.5
100 -0.3
C
50 00
=1
Tc Tc=25 C
30 -0.1
COMMON EMITTER Tc=-25 C
VCE =-2V -0.05
10 -0.03
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10

COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)




Pc - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION P C (W)




1.6 -20
I C MAX.(PULSED) **
COLLECTOR CURRENT I C (A)




1.4 -10 10
m
I C MAX. S* 100mS*
1.2 -5
(CONTINUOUS)
-3 D
OP C
1.0 Tc ERA
=2 T
5 IO
0.8 C N
-1
0.6 * SINGLE PULSE Tc=25 C
-0.5
VCEO MAX.




** PULSE WIDTH=10ms(MAX)
0.4 -0.3 DUTY CYCLE=30%(MAX)
CURVES MUST BE DERATED
0.2 LINEARLY WITH INCREASE
IN TEMPERATURE
0 -0.1
0 20 40 60 80 100 120 140 160 -0.3 -0.5 -1 -3 -5 -10 -30 -50

AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V)



2003. 7. 24 Revision No : 2 2/2