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SEMICONDUCTOR KTC9013S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Excellent hFE Linearity. A _
2.93 + 0.20
Complementary to KTC9012S. B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
MAXIMUM RATING (Ta=25 ) K 0.00 ~ 0.10
L 0.55
P P
CHARACTERISTIC SYMBOL RATING UNIT M 0.20 MIN
N 1.00+0.20/-0.10
Collector-Base Voltage VCBO 40 V P 7
N
C
J
Collector-Emitter Voltage VCEO 30 V M
K
Emitter-Base Voltage VEBO 5 V
1. EMITTER
Collector Current IC 500 mA 2. BASE
3. COLLECTOR
Emitter Current IE -500 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150 SOT-23
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=1V, IC=50mA 96 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE IC=100mA, VCE=1V 0.8 1.0 V
Transition Frequency fT VCE=6V, IC=20mA, f=100MHz 140 - - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification F:96 135, G:118 166, H:144 202, I:176 246
2003. 3. 25 Revision No : 1 1/2
KTC9013S
I C - VCE
(LOW VOLTAGE REGION) h FE - I C
500 500
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
Ta=25 C 300
VCE =6V
DC CURRENT GAIN h FE
400 6.0 4.0 3.0
Ta =100 C
Ta =25 C
C
300 2.0 Ta =-25
100
VCE =1V
200 50
1.0
30
100 0.5
I B =0.1mA COMMON EMITTER
0 10
0 1 2 3 4 5 0.5 1 3 10 30 100 300 1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I B - VBE
COLLECTOR-EMITTER SATURATION
1 2K
COMMON EMITTER COMMON
I C /I B =10 1K EMITTER
0.5
BASE CURRENT I B (