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TPT5609
TO-92L Transistor (NPN)

TO-92L
1. EMITTER
4.700
5.100
2. COLLECTOR

3. BASE 7.800
8.200
3
2
Features 1 0.600
0.800

Excellent linearity of Current Gain
0.350
Low saturation voltage 0.550
13.800
Complementary to TPT5610 14.200

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
1.270 TYP
VCBO Collector- Base Voltage 25 V
2.440
2.640
VCEO Collector-Emitter Voltage 20 V
0.000 1.600
VEBO Emitter-Base Voltage 5 V 0.300
0.350
IC Collector Current -Continuous 1 A 0.450
3.700
4.100 1.280
PC Collector Power Dissipation 0.75 W
1.580

TJ Junction Temperature 150 4.000

Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC =10