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BUK9907-40ATC
TrenchPLUS logic level FET
Rev. 01 -- 28 January 2002 Product data
M3D745
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology, featuring very low on-state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9907-40ATC in SOT263B.
2. Features
s Typical on-state resistance 5.8 m
s Q101 compliant
s ESD and overvoltage protection
s Monolithically integrated temperature sensor for overload protection.
3. Applications
s Automotive and power switching:
x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
x Protected drive for lamps.
4. Pinning information
Table 1: Pinning - SOT263B simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d a
2 anode (a)
3 drain (d)
4 cathode (k) g
5 source (s)
mb mounting base; MBL306 s k
connected to drain (d)
1 5
MBL263
SOT263B
Philips Semiconductors BUK9907-40ATC
TrenchPLUS logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDSR(CL) drain-source clamping voltage Tj = 25