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2SA719/2SA720(PNP)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
For low-frequency power amplification
and driver amplification
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 2SA719 -30
V
2SA720 -60
VCEO Collector-Emitter Voltage 2SA719 -25
V
2SA720 -50
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
2SA719 V(BR)CBO IC= -10uA, IE=0 -30 V
2SA720 -60
Collector-emitter breakdown voltage
2SA719 V(BR)CEO IC= -10mA ,IB=0 -25 V
2SA720 -50
Emitter-base breakdown voltage V(BR)EBO IE= -10uA, IC=0 -5 V
Collector cut-off current ICBO VCB= -20V,IE=0 -0.1 uA
Emitter cut-off current IEBO VEB= -4V,IC=0 -0.1 uA
hFE(1) VCE=-10V, IC= -150mA 85 340
DC current gain
hFE(2) VCE=-10V, IC= -500mA 40
Collector-emitter saturation voltage VCE(sat) IC=-300mA, IB= -30mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC= -300mA, IB=-30mA -1.5 V
VCE= -10V, IC= -50mA
Transition frequency fT 200 MHz
f = 200MHz
Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHZ 15 pF
CLASSIFICATION hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
2SA719/2SA720(PNP)
TO-92 Bipolar Transistors
Typical Characteristics
2SA719/2SA720(PNP)
TO-92 Bipolar Transistors