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MJE2955(PNP)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOTR
3. EMITTER
3
2
1
Features
GENERAL PURPOSE AND SWITCHING APPLICATIONS.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -70 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -10 A
PC Collector Power Dissipation 2 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10mA, IE=0 -70 V
Collector-emitter breakdown voltage V(BR)CEO IC=-200mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10mA, IC=0 -5 V
Collector cut-off current ICBO VCB=-70V, IE=0 -1 mA
Emitter cut-off current IEBO VEB=-5V, IC=0 -5 mA
hFE(1) * VCE=-4V, IC=-4A 20 100
DC current gain
hFE(2) * VCE=-4V, IC=-10A 5
VCE(sat) * IC=-4A, IB=-0.4A -1.1 V
Collector-emitter saturation voltage
VCE(sat) * IC=-10A, IB=-3.3A -8 V
Base-emitter voltage VBE* VCE=-4V, IC=-4A -1.8 V
Transition frequency fT VCE=-10V, IC=-0.5A 2 MHz
Note:*Pulse test: tp300S, 0.02.
MJE2955(PNP)
TO-220 Transistor
Typical Characteristics