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SEMICONDUCTOR KRC281M~KRC286M
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
B
FEATURES
High emitter-base voltage : VEBO=25V(Min)
A
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) O DIM MILLIMETERS
F
A 3.20 MAX
Low on resistance : Ron=1 (Typ.) (IB=5mA) H M B 4.30 MAX
C 0.55 MAX
With Built-in Bias Resistors. _
G
D 2.40 + 0.15
Simplify Circuit Design. E 1.27
F 2.30
Reduce a Quantity of Parts and Manufacturing Process. C
G _
14.00 + 0.50
H 0.60 MAX
J 1.05
E E
K 1.45
EQUIVALENT CIRCUIT L 25
M 0.80
J
D
1 2 3 N N 0.55 MAX
K
C O 0.75
L
R1 1. EMITTER
B 2. COLLECTOR
3. BASE
E TO-92M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 25 V
Collector Current IC 300 mA
Collector Power Dissipation PC 400 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2002. 12. 5 Revision No : 1 1/2
KRC281M~KRC286M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V
Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - - 0.1 V
DC Current Gain hFE VCE=2V, IC=4mA 350 - 1200
KRC281M - 2.2 -
KRC282M - 4.7 -
KRC283M - 5.6 -
Input Resistor R1 k
KRC284M - 6.8 -
KRC285M - 10 -
KRC286M - 22 -
Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF
* Characteristic of Transistor Only.
Note) hFE Classification B:350 1200
2002. 12. 5 Revision No : 1 2/2