bf1208d.pdf part of Philips bf1208d bf1208d.pdf, . Electronic Components Datasheets Active components Transistors Philips bf1208d.pdf text manual preview

Text preview for : bf1208d.pdf part of Philips bf1208d . Electronic Components Datasheets Active components Transistors Philips bf1208d.pdf

Back to : bf1208d.pdf | Home

BF1208D
Dual N-channel dual gate MOSFET
Rev. 01 -- 16 May 2007 Product data sheet

1. Product profile

1.1 General description
The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.

The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features
I Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
I Internal switch to save external components
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio

1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment
NXP Semiconductors BF1208D
Dual N-channel dual gate MOSFET

1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage DC - - 6 V
ID drain current DC - - 30 mA
Ptot total power dissipation Tsp 109