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SEMICONDUCTOR KMB3D5PS30QA
TECHNICAL DATA SBD and P-Ch Trench MOSFET
GENERAL DESCRIPTION
It is particularly suited for switching such as DC/DC Converters.
It is driven as low as 4.5V and fast switching, high efficiency.
H
T
FEATURES D P G L
VDSS=-30V, ID=-3.5A.
Drain-Source ON Resistance.
RDS(ON)=85m (Max.) @ VGS=-10V A
DIM MILLIMETERS
RDS(ON)=180m (Max.) @ VGS=-4.5V A _
4.85 + 0.2
B1 _
3.94 + 0.2
8 5 B2 _
6.02 + 0.3
D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
H _
1.63 + 0.2
1 4 L _
0.65 + 0.2
P 1.27
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS -30 V
Gate Source Voltage VGSS 20 V
DC ID * -3.5 A FLP-8
Drain Current
Pulsed IDP -20 A
25 1.4 W
Drain Power Dissipation PD * Marking
100 1 W
Type Name
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
KMB3D5PS
Thermal Resistance, Junction to Ambient RthJA* 90 /W 30QA
Note : *Sorface Mounted on FR4 Board Lot No.
702
Schottky Diode Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL PATING UNIT
Repetitive Peak Reverse Voltage VRRM 30 V
Average Forward Current IF 1.4 A
PIN CONNECTION (TOP VIEW)
A 1 8 C 1 8
A 2 7 C 2 7
S 3 6 D 3 6
G 4 5 D 4 5
2007. 8. 13 Revision No : 2 1/5
KMB3D5PS30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -30 - - V
Drain Cut-off Current IDSS VDS=-30V, VGS=0V - - -1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.0 - -3.0 V
VGS=-10.0V, ID=-2.5A - 66 85.0
Drain-Source ON Resistance RDS(ON) m
VGS=-4.5V, ID=-1.8A - 125 180.0
Forward Transconductance Gfs VDS=-10V, ID=-2.5A - 5.0 - S
Dynamic (Note 3)
Input Capaclitance Ciss - 550 -
Ouput Capacitance Coss VDS=-10V, f=1MHz - 210 - pF
Reverse Transfer Capacitance Crss - 50 -
Total Gate Charge Qg - 8.7 -
Gate-Source Charge Qgs VDS=-10V, VGS=-10V, ID=-2.5A - 1.9 - nC
Gate-Drain Charge Qgd - 1.3 -
Turn-On Delat Time td(on) - 7 -
Turn-On Rise Time tr VDD=-10V, VGS=-10V - 9 -
ns
Turn-On Deley Time td(off) ID=10 , RG=50 (Note 1) - 14 -
Turn-On Fall Time tf - 8 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF IDR=-1.7A, VGS=0V - - -1.2 V
Note
1. Pulse Test : Pulse width 10 , Duty cycle 1%
SHOTTKY DIODE ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage Drop VF IF=1.0A - 0.45 0.5 V
Reverse Leakage Current IR VR=30V - 0.004 0.1 mA
Junction Capactitance CT VR=10V - 62 - PF
2007. 8. 13 Revision No : 2 2/5
KMB3D5PS30QA
Fig1. ID - VGS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) ()
20 0.4 Common Source
10.0V Common Source
5.0V 4.5V Tc=25 C Tc=25 C
Pulse Test Pulse Test
16 0.32
Drain Current ID (A)
4.0V 3.5V
12 0.24
8 0.16
VGS=3.0V VGS=4.5V
4 0.08
VGS=10V
0 0
0 2 4 6 8 10 0 3 6 9 12
Drain - Source Voltage VGS (V) Drain - Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
20 200
Common Source Common Source
VDS=10V VDS=10V
Drain Source On Resistance
Pulse Test Pulse Test
16 160
Drain Current ID (A)
25 C ID=2.5A
RDS(ON) (m)
125 C
Tc=-55 C
12 120
8 80
4 40
0 0
1 2 3 4 5 -80 -40 0 40 80 120 160
Gate-Source Volatage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IDR - VSDF
Reverse Source-Drain Current IDR (A)
5 Common Source 10
Gate Threshold Voltage Vth (V)
Common Source
VGS=VDS Tc= 25 C
ID=250