std4nb40.pdf part of ST std4nb40 std4nb40.pdf, . Electronic Components Datasheets Active components Transistors ST std4nb40.pdf text manual preview

Text preview for : std4nb40.pdf part of ST std4nb40 . Electronic Components Datasheets Active components Transistors ST std4nb40.pdf

Back to : std4nb40.pdf | Home

STD4NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESHTM MOSFET
PRELIMINARY DATA

TYPE V DSS R DS(on) ID
STD4NB40 400 V < 1.8 3.7 A

s TYPICAL RDS(on) = 1.47
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
s VERY LOW INTRINSIC CAPACITANCES 2 3
s GATE CHARGE MINIMIZED 1 1

DESCRIPTION
Using the latest high voltage MESH OVERLAYTM IPAK DPAK
process, SGS-Thomson has designed an TO-251 TO-252
advanced family of power MOSFETs with (Suffix "-1") (Suffix "T4")
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.

APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 400 V
V DGR Drain- gate Voltage (R GS = 20 k) 400 V
V GS Gate-source Voltage