Text preview for : stp80n06-10.pdf part of ST stp80n06-10 . Electronic Components Datasheets Active components Transistors ST stp80n06-10.pdf
Back to : stp80n06-10.pdf | Home
STP80N06-10
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STP80N06-10 60 V < 0.010 80 A
s TYPICAL RDS(on) = 8.5 m
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCE TESTED
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS 3
s APPLICATION ORIENTED 2
1
CHARACTERIZATION
APPLICATIONS TO-220
s HIGH CURRENT, HIGH SPEED SWITCHING
s PWM MOTOR CONTROL
s DC-DC & DC-AC CONVERTER
s SYNCROUNOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 60 V
VDGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage