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SEMICONDUCTOR MMBTA42/43
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Complementary to MMBTA92/93. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Collector-Base MMBTA42 300 P P
L 0.55
VCBO V M 0.20 MIN
Voltage MMBTA43 200 N 1.00+0.20/-0.10
N
C
P 7
J
Collector-Emitter MMBTA42 300
VCEO V M
K
Voltage MMBTA43 200
Emitter-Base Voltage VEBO 5.0 V 1. EMITTER
2. BASE
Collector Current IC 500 mA
3. COLLECTOR
Emitter Current IE -500 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150
SOT-23
Storage Temperature Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
Marking Lot No. Lot No.
Type Name
AAX Type Name
ABX
MMBTA42 MMBTA43
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base MMBTA42 300 - -
V(BR)CBO IC=100 A, IE=0 V
Breakdown Voltage MMBTA43 200 - -
Collector-Emitter MMBTA42 300 - -
V(BE)CEO IC=1.0mA, IB=0 V
Breakdown Voltage MMBTA43 200 - -
IC=1.0mA, VCE=10V 40 - -
DC Current Gain * hFE IC=10mA, VCE=10V 40 - -
IC=30mA, VCE=10V 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 50 - - MHz
Collector Output MMBTA42 - - 3.0
Cob VCB=20V, IE=0, f=1MHz pF
Capacitance MMBTA43 - - 4.0
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
1999. 11. 30 Revision No : 3 1/2
MMBTA42/43
1999. 11. 30 Revision No : 3 2/2