Text preview for : kta2017.pdf part of KEC kta2017 . Electronic Components Datasheets Active components Transistors KEC kta2017.pdf
Back to : kta2017.pdf | Home
SEMICONDUCTOR KTA2017
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
E
High Voltage : VCEO=-120V. M B M
Excellent hFE Linearity DIM MILLIMETERS
A _
2.00 + 0.20
D
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 B _
1.25 + 0.15
A
_
J
C 0.90 + 0.10
High hFE: hFE=200 700. 3
G
1
D 0.3+0.10/-0.05
Low Noise : NF=1dB(Typ.), 10dB(Max.). E _
2.10 + 0.20
G 0.65
Complementary to KTC4077. H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
L 0.70
C
H
L
M _
0.42 + 0.10
N 0.10 MIN
N N
K
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO -120 V 2. BASE
3. COLLECTOR
Collector-Emitter Voltage VCEO -120 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
USM
Base Current IB -20 mA
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150