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KSP5179 NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 2.5 V
Collector Current IC 50 mA
PC 200 mW
Collector Dissipation (T A=25 )
Derate above 25 1.14 mW/
Collector Dissipation (T C=25 ) mW
PC 300
Derate above 25 mW/
1.71
Junction Temperature
Storage Temperature
TJ
T STG
150
-55~150
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Sustaining Voltage VCEO (sus) IC=3mA, IB=0 12 V
Collector-Base Breakdown Voltage BVCBO IC=0.001mA, IE=0 20 V
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Emitter-Base Breakdown Voltage BVEBO IE=0.01, IC=0 2.5 V
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Collector Cut-off Current ICBO VCB=15V, IE=0 0.02
VCB=15V, IE=0, Ta=150 1
DC Current Gain hFE VCB=1V, IC=3mA 25 250
Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA 0.4 V
Base-Emitter Saturation Voltage VBE (sat) IC=10mA, IB=1mA 1 V
Current Gain Bandwidth Product fT VCE=6V, IC=5mA 900 2000 MHz
Collector-Base Capacitance CCB VCB=10V, IE=0, f=0.1 to MHz 1 pF
Small Signal Current Gain hFE VCE=6V, IC=2mA, f=1KHz 300