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2SA1 661

SOT-89-3L
TRANSISTOR(PNP)

1. BASE
FEATURES
Small Flat Package 2. COLLECTOR

High Current Application
3. EMITTER
High Voltage
High Transition Frequency

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -0.8 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -120 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-120V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
DC current gain hFE VCE=-5V, IC=-100mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1 V
Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V
Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 30 pF
VCE=-5V,IC=-0.1A,
Transition frequency fT 120 MHz
f=30MHz

CLASSIFICATION OF hFE
RANK O Y
RANGE 80