ces2308(esd).pdf part of CET ces2308(esd) ces2308(esd).pdf, . Electronic Components Datasheets Active components Transistors CET ces2308(esd).pdf text manual preview

Text preview for : ces2308(esd).pdf part of CET ces2308(esd) . Electronic Components Datasheets Active components Transistors CET ces2308(esd).pdf

Back to : ces2308(esd).pdf | Home

CES2308
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

20V, 5.4A, RDS(ON) = 27m @VGS = 4.5V.
RDS(ON) = 36m @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. D
Lead free product is acquired.

SOT-23 package.

G

D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS