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STE48NM50
N-CHANNEL 550V @ Tjmax - 0.08 - 48A ISOTOP
MDmeshTM MOSFET
Table 1: General Features Figure 1: Package
TYPE VDSS RDS(on) ID
(@Tjmax)
STE48NM50 550V < 0.1 48 A
s TYPICAL RDS(on) = 0.08
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH ISOTOP
MANUFACTURING YIELDS
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro- Figure 2: Internal Schematic Diagram
cess with the Company's PowerMESHTM horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion's products.
APPLICATIONS
The MDmeshTM family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STE48NM50 E48NM50 ISOTOP TUBE
Rev. 2
March 2005 1/9
STE48NM50
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
VGS Gate- source Voltage