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SEMICONDUCTOR KU034N08P
TECHNICAL DATA N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES K
VDSS= 75V, ID= 170A
Drain-Source ON Resistance :
RDS(ON)=3.4m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 75 V
Gate-Source Voltage VGSS 20 V
@TC=25 170*
ID
Drain Current @TC=100 106 A
Pulsed (Note1) IDP 424*
Single Pulsed Avalanche Energy EAS 1,000 mJ
(Note 2)
Repetitive Avalanche Energy EAR 19 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 192 W
PD
Dissipation Derate above 25 1.54 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.65 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
PIN CONNECTION
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KU034N08P
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 75 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.07 - V/
Drain Cut-off Current IDSS VDS=75V, VGS=0V, - - 10 uA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=80A - 3.0 3.4 m
Dynamic
Total Gate Charge Qg - 185 -
VDS=60V, ID=80A
Gate-Source Charge Qgs - 45 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 60 -
Turn-on Delay time td(on) - 160 -
VDD=37V
Turn-on Rise time tr - 250 -
ID=80A ns
Turn-off Delay time td(off) - 550 -
RG=25 (Note4,5)
Turn-off Fall time tf - 230 -
Input Capacitance Ciss - 10,900 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 1,150 - pF
Reverse Transfer Capacitance Crss - 470 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 137
VGS Pulsed Source Current ISP - - 548
Diode Forward Voltage VSD IS=80A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=80A, VGS=0V, - 75 - ns
Reverse Recovery Charge Qrr dIs/dt=300A/ s - 0.5 - uC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =100uH, IS=100A, VDD=60V, RG=25 , Starting Tj=25 .
Note 3) IS 80A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
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VDS = 2V
100 C
25 C
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